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PD - 96226
IRF8734PBF
HEXFET(R) Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free
VDSS
RDS(on) max Qg (typ.) 30V 3.5m:@VGS = 10V 20nC
S S S G
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Power Dissipation Pulsed Drain Current
Max.
30 20 21 17 168 2.5 1.6 0.02 -55 to + 150
Units
V
f Power Dissipation f
c
A
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient
f
g
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 10
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
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1
2/12/09
IRF8734PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 85 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.023 2.9 4.2 1.80 -6.5 --- --- --- --- --- 20 5.2 2.3 6.9 5.4 9.2 15 1.7 13 16 15 8.0 3175 627 241 --- --- 3.5 5.1
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 21A m VGS = 4.5V, ID = 17A
e e
2.35 V VDS = VGS, ID = 50A --- mV/C VDS = 24V, VGS = 0V 1.0 A VDS = 24V, VGS = 0V, TJ = 125C 150 100 -100 --- 30 --- --- --- --- --- --- 3.1 --- --- --- --- --- --- --- Typ. --- --- pF nA S VGS = 20V VGS = -20V VDS = 15V, ID = 17A VDS = 15V VGS = 4.5V ID = 17A See Figs. 16a &16b nC VDD = 15V, VGS = 4.5V ns ID = 17A RG = 1.8 See Figs. 15a &15b VGS = 0V VDS = 15V = 1.0MHz Max. 216 17 Units mJ A VDS = 16V, VGS = 0V
nC
e
Avalanche Characteristics
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 20 25 3.1 A 168 1.0 30 38 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 17A, VGS = 0V TJ = 25C, IF = 17A, VDD = 15V di/dt = 345A/s
e
e
2
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IRF8734PBF
1000
TOP
1000
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1 0.1 0.01 2.3V
10
1
2.3V
60s PULSE WIDTH
0.001 0.1 1 Tj = 25C 0.1 100 0.1 1 10
60s PULSE WIDTH
Tj = 150C 10 100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 21A VGS = 10V
ID, Drain-to-Source Current (A)
100
10
T J = 150C
1
T J = 25C VDS = 15V 60s PULSE WIDTH
0.1 1.5 2 2.5 3 3.5 4 4.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF8734PBF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 ID= 17A VDS= 24V VDS= 15V
C, Capacitance (pF)
10000 Ciss 1000
Coss Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
5
10 15 20 25 30 35 40 45 50 55 QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec
ISD, Reverse Drain Current (A)
100
TJ = 150C
10
ID, Drain-to-Source Current (A)
100
10
1msec
1
TJ = 25C
1
T A = 25C
VGS = 0V
Tj = 150C Single Pulse 0.1 0 1
10msec
0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-to-Drain Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF8734PBF
25
VGS(th) , Gate Threshold Voltage (V)
2.5
20
ID, Drain Current (A)
2.0
15
1.5
ID = 50A
10
5
1.0
0 25 50 75 100 125 150 T A , Ambient Temperature (C)
0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA ) C/W
D = 0.50 10 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 a C 1 2 3 4 4
1
Ri (C/W)
9.66830 16.3087 20.7805 3.14828
0.169346 11.46293 1.815389 0.005835
i (sec)
0.1
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.1 1 10 100 1000
0.001 1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF8734PBF
RDS(on), Drain-to -Source On Resistance (m )
20 ID = 21A 15
1000
EAS , Single Pulse Avalanche Energy (mJ)
900 800 700 600 500 400 300 200 100 0 25 50 75
ID TOP 1.26A 2.03A BOTTOM 17A
10 TJ = 125C 5 T J = 25C 0 2 4 6 8 10
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
V(BR)DSS tp
15V
VDS
L
DRIVER
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 14a. Unclamped Inductive Test Circuit
VDS VGS RG RD
Fig 14b. Unclamped Inductive Waveforms
VDS 90%
D.U.T.
+
- VDD
VGS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRF8734PBF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
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IRF8734PBF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
9 6 ' & ! % " $ 7
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SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U
"YA !&Ab$d
'YA &'Ab&d
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8734PBF
SO-8 Tape and Reel
(Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF8734PBF
Orderable part number IRF8734PBF IRF8734TRPbF Package Type SO-8 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note
Qualification Information
Qualification level
Consumer (per JEDEC JESD47F guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D)
Moisture Sensitivity Level RoHS Compliant

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.69mH RG = 25, IAS = 16A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board R is measured at TJ of approximately 90C.
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2009
10
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